View APTGL475U120D4G_4545409.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGL475U120D4G
Single switch Trench + Field Stop IGBT4 Power Module
1
VCES = 1200V IC = 475A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated * * * * Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration
3 5 2
Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 610 475 1200 20 2082 800A@1150V Unit V
APTGL475U120D4G - Rev 0 July, 2008
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGL475U120D4G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic Zero Gate Voltage Collector Current ICES VCE(sat) VGE(th) Collector Emitter Saturation Voltage Gate Threshold Voltage Test Conditions VGE = 0V ; VCE = 1200V VGE =15V Tj = 25C IC = 400A Tj = 150C VGE = VCE, IC = 10 mA Min Typ 1.8 2.2 5.8 Max 4 2.2 6.5 Unit mA V V
5
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= -8V / 15V ; VCE=600V IC=400A Inductive Switching (25C) VGE = 15V VCE = 600V IC = 400A RG = 1.8 Inductive Switching (150C) VGE = 15V VCE = 600V IC = 400A RG = 1.8 VGE = 15V TJ = 150C VCE = 600V IC = 400A TJ = 150C RG = 1.8 VGE 15V ; VBus = 900V tp 10s ; Tj = 150C Min Typ 24.6 1.62 1.38 2.3 160 30 340 80 170 40 450 170 44 44 1600 ns Max Unit nF C
ns
mJ mJ A
Diode ratings and characteristics
Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 400A VR = 600V di/dt = 7000A/s IF = 400A VGE = 0V Test Conditions
VR=1200V
Min 1200 Tj = 25C Tj = 150C Tj = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Typ
Max 250 2000
Unit V A A
400 1.7 1.65 155 300 37.2 78 16 32 2.2
V ns C mJ
APTGL475U120D4G - Rev 0 July, 2008
www.microsemi.com
2-5
APTGL475U120D4G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 2500 -40 -40 -40 3 1 Min Typ Max 0.072 0.14 175 125 125 5 2 350 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
D4 Package outline (dimensions in mm)
www.microsemi.com
3-5
APTGL475U120D4G - Rev 0 July, 2008
APTGL475U120D4G
Typical Performance Curve
800 Output Characteristics (VGE=15V) Output Characteristics 800 TJ = 150C 600 IC (A)
TJ=25C TJ=150C VGE=19V VGE=15V
600 IC (A)
400
400
VGE=9V
200
200
0 0 1 2 VCE (V) Transfert Characteristics
TJ=25C
0 3 4 0 1 2 VCE (V) 3 4
800
160 140 120 100 E (mJ)
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 1.8 TJ = 150C
Eon
600 IC (A)
400
TJ=150C
80 60 40 20
Er
Eoff
200
0 5 6 7 8 9 10 11 12 13 VGE (V) Switching Energy Losses vs Gate Resistance 80 70 60 E (mJ) 50 40 30 20 0 2.5 5 7.5 Gate Resistance (ohms) 10
Er
0 0 200 400 IC (A) Reverse Bias Safe Operating Area 960
VCE = 600V VGE =15V IC = 400A TJ = 150C
Eon
600
800
800 640
Eoff
IC (A)
480 320 160 0 0 300 600 900 VCE (V) 1200 1500
VGE=15V TJ=150C RG=1.8
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 Thermal Impedance (C/W)
0.9
0.06
IGBT
0.04
0.5 0.3
0.02
0.1 0.05 Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
www.microsemi.com
4-5
APTGL475U120D4G - Rev 0 July, 2008
0.7
APTGL475U120D4G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 180 150 120 90 60 30 0 0 120 240 360 480 600 IC (A)
Hard switching ZVS ZCS VCE=600V D=50% RG=1.8 TJ=150C Tc=75C
Forward Characteristic of diode 800
600
IF (A)
400
200
TJ=150C TJ=25C
0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7 0.5 0.3 Diode
0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
APTGL475U120D4G - Rev 0 July, 2008

▲Up To Search▲

Price & Availability of APTGL475U120D4G

	To Download APTGL475U120D4G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .